FIELD-EFFECTS IN POLYCRYSTALLINE-SILICON FILMSKAMINS TI.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 789-799; H.T. 1; BIBL. 11 REF.Serial Issue

CHEMICALLY VAPOR DEPOSITED POLYCRYSTALLINE-SILICON FILMS.KAMINS TI.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 221-229; BIBL. 1 P.Article

A NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMSKAMINS TI.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 915-916; BIBL. 6 REF.Serial Issue

OXIDATION OF PHOSPHORUS-DOPED LOW PRESSURE AND ATMOSPHERIC PRESSURE CVD POLYCRISTALLINE-SILICON FILMSKAMINS TI.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 5; PP. 838-844; BIBL. 13 REF.Article

DEFORMATION OCCURRING DURING THE DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS.KAMINS TI.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 5; PP. 681-684; BIBL. 8 REF.Article

MINORITY-CARRIER LIFETIME IN DIELECTRICALLY ISOLATED SINGLE-CRYSTAL SILICON FILMS DEFINED BY ELECTROCHEMICAL ETCHING.KAMINS TI.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 675-681; BIBL. 15 REF.Article

A CMOS STRUCTURE USING BEAM-RECRYSTALLIZED POLYSILICONKAMINS TI.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 11; PP. 341-343; BIBL. 7 REF.Article

SURFACE STABILIZATION OF POLYCRYSTALLINE-SILICON FILMS DURING LASER RECRYSTALLIZATIONKAMINS TI.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1824-1826; BIBL. 6 REF.Article

PHOTOSENSING ARRAYS WITH IMPROVED SPATIAL RESOLUTIONKAMINS TI; FONG GT.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 2; PP. 154-159; BIBL. 6 REF.Article

PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS. I: UNDOPED FILMS DEPOSITED FROM 525^O TO 725^OCKAMINS TI; CHIANG KL.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2326-2331; BIBL. 8 REF.Article

EFFECT OF LASER RECRYSTALLIZATION OF POLYSILICON ON THE UNDERLYING SUBSTRATEKAMINS TI; DROWLEY CI.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 363-365; BIBL. 6 REF.Article

PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS. II: FILMS DOPED DURING DEPOSITIONKAMINS TI; CHIANG KL.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2331-2335; BIBL. 10 REF.Article

PULSED-ELECTRON-BEAM ANNEALING OF POLYCRYSTALLINE-SILICON FILMSKAMINS TI; GREENWALD AC.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 282-285; BIBL. 8 REF.Article

MOSFET'S IN ELECTRON-BEAM RECRYSTALLIZED POLYSILICONKAMINS TI; VON HERZEN BP.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 313-315; BIBL. 10 REF.Article

MOSFETS IN LAYER-RECRYSTALLIZED POLY-SILICON ON QUARTZKAMINS TI; PIANETTA PA.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 214-216; BIBL. 9 REF.Article

AN ANALYSIS OF LPCVD SYSTEM PARAMETERS FOR POLYSILICON, SILICON NITRIDE AND SILICON DIOXIDE DEPOSITIONBROWN WA; KAMINS TI.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 7; PP. 51-84; (8 P.); BIBL. 5 REF.Article

ENHANCED CAPACITOR FOR ONE-TRANSISTOR MEMORY CELL.SODINI CG; KAMINS TI.1976; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 10; PP. 1187-1189; BIBL. 3 REF.Article

HIGH-RESOLUTION SEM OBSERVATION OF SEMICONDUCTOR DEVICE CROSS-SECTIONSMEIERAN ES; KAMINS TI.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 545-548; H.T. 3; BIBL. 10 REF.Serial Issue

STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMSKAMINS TI; CASS TR.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 16; NO 2; PP. 147-165; BIBL. 30 REF.Serial Issue

P-N JUNCTIONS IN POLYCRISTALLINE-SILICON FILMSMANOLIU J; KAMINS TI.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 10; PP. 1103-1106; BIBL. 6 REF.Serial Issue

A MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL FILMS. II: COMPARISON OF THEORY AND EXPERIMENTREIF R; KAMINS TI; SARASWAT KC et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 653-660; BIBL. 9 REF.Article

STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS.KAMINS TI; MANDURAH MM; SARASWAT KC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 927-932; BIBL. 16 REF.Article

A DYNAMIC RAM CELL IN RECRYSTALLIZED POLYSILICONJOLLY RD; KAMINS TI; MCCHARLES RH et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 8-11; BIBL. 7 REF.Article

ANNEALING OF IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES RUSING AN INCOHERENT LIGHT SOURCEPOWELL RA; FULKS RT; KAMINS TI et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 1; PP. 33-36; BIBL. 17 REF.Article

A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON. I: THEORYMANDURAH MM; SARASWAT KC; KAMINS TI et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1163-1171; BIBL. 21 REF.Article